Effect of V2O5 Addition on the Microwave Dielectric Properties of Ba(Mg1/3Nb2/3)O3 Ceramics


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The effect of V2O5 as additives of different content on the densification, microstructure and dielectric properties of Ba(Mg1/3Nb2/3)O3 (BMN) was investigated. The sintering temperature of the V2O5-doped BMN samples were lowered down to 1250 oC with 0.5wt% V2O5 compared to pure BMN ceramics where the sintering temperature was 1500 oC at least. The εr and τf was not influenced much, while the Q value was affected by the sintering temperature and the V2O5 additives. The Q value decreased with decrease of the sintering temperature and the V2O5 addition increasing due to the bulk density and the second phase. Good microwave dielectric properties of Q·f=42100GHz, εr =31.7 and temperature coefficient of resonance frequency (τf) =22.7ppm/ oC were obtained with 0.25 wt% V2O5 sintered at 1350 oC for 4h.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong




L. Shan and W. Pan, "Effect of V2O5 Addition on the Microwave Dielectric Properties of Ba(Mg1/3Nb2/3)O3 Ceramics", Key Engineering Materials, Vols. 336-338, pp. 301-303, 2007

Online since:

April 2007





[1] S. Nomura: Ferroelectrics Vol. 49 (1983), p.61.

[2] J.B. Lim, et al.: Jpn. J. Appl. Phys. Vol. 43 (8A) (2004), p.5388.

[3] A. Veres, et al.: J. Eur. Ceram. Soc. Vol. 25 (2005), p.2759.

[4] M.A. Akbas, et al.: J. Am. Ceram. Soc. Vol. 81 (1998), p.670.

[5] F. Azough, et al.: Key Eng. Mater. Vol. 264-268 (2004), p.1153.

[6] K.P. Surendran: J. Solid State Chem. Vol. 177 (2004), p.4031.

[7] Z.Q. Tian, et al.: J. Wuhan Univ. Technol. Vol. 27 (6)(2005), p.5. Fig. 4 Variation in the dielectric constant and the Q value of the BMN+x V2O5 ceramics with sintering temperature.