Effect of V2O5 Addition on the Microwave Dielectric Properties of Ba(Mg1/3Nb2/3)O3 Ceramics
The effect of V2O5 as additives of different content on the densification, microstructure and dielectric properties of Ba(Mg1/3Nb2/3)O3 (BMN) was investigated. The sintering temperature of the V2O5-doped BMN samples were lowered down to 1250 oC with 0.5wt% V2O5 compared to pure BMN ceramics where the sintering temperature was 1500 oC at least. The εr and τf was not influenced much, while the Q value was affected by the sintering temperature and the V2O5 additives. The Q value decreased with decrease of the sintering temperature and the V2O5 addition increasing due to the bulk density and the second phase. Good microwave dielectric properties of Q·f=42100GHz, εr =31.7 and temperature coefficient of resonance frequency (τf) =22.7ppm/ oC were obtained with 0.25 wt% V2O5 sintered at 1350 oC for 4h.
Wei Pan and Jianghong Gong
L. Shan, W. Pan, "Effect of V2O5 Addition on the Microwave Dielectric Properties of Ba(Mg1/3Nb2/3)O3 Ceramics", Key Engineering Materials, Vols. 336-338, pp. 301-303, 2007