Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited through Sol-Gel Process

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In present work, sol-gel process is used to direct the organization of high quality and pore-free parasite PZT thin films with a composition near the morphotropic phase boundary (Zr/Ti = 52/48). The PZT transparent sol can be obtained by dissolving the zirconium oxynitrate, butyl titanate and lead acetate in ethylene glycol with the molar ratio of 0.52:0.48:1 and the PZT gel can be gained by spin-coating. In such process, PZT thin films can be readily prepared by hydrolysis on hot plate at 350°C for 20min and annealing in RTA at 650°C for 1 minute. The structural and electric characteristics of the films have been carried out by XRD, AFM and the C-V measurements, etc. Experimental results have indicated that by treating film RTA at 6508 for 1 minute film with perfect crystallization and good surface morphology with a RMS roughness of 2.0nm can be obtained, and the remnant polarization Pr (28.5 μC/cm2) and coercive field Ec (39.8kV/cm) are obtained in the P-E hysteresis loops. The films have a dielectric constant ε of 1080 and a dielectric loss tanδ of 0.01 at 1 kHz. Ferroelectric polarization fatigue test of the films has shown that high fatigue resistance up to 3 × 1010 cycles before Pr is decreased by 50%.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

39-41

DOI:

10.4028/www.scientific.net/KEM.336-338.39

Citation:

L. S. Qiang et al., "Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited through Sol-Gel Process", Key Engineering Materials, Vols. 336-338, pp. 39-41, 2007

Online since:

April 2007

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$35.00

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