Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited through Sol-Gel Process


Article Preview

In present work, sol-gel process is used to direct the organization of high quality and pore-free parasite PZT thin films with a composition near the morphotropic phase boundary (Zr/Ti = 52/48). The PZT transparent sol can be obtained by dissolving the zirconium oxynitrate, butyl titanate and lead acetate in ethylene glycol with the molar ratio of 0.52:0.48:1 and the PZT gel can be gained by spin-coating. In such process, PZT thin films can be readily prepared by hydrolysis on hot plate at 350°C for 20min and annealing in RTA at 650°C for 1 minute. The structural and electric characteristics of the films have been carried out by XRD, AFM and the C-V measurements, etc. Experimental results have indicated that by treating film RTA at 6508 for 1 minute film with perfect crystallization and good surface morphology with a RMS roughness of 2.0nm can be obtained, and the remnant polarization Pr (28.5 μC/cm2) and coercive field Ec (39.8kV/cm) are obtained in the P-E hysteresis loops. The films have a dielectric constant ε of 1080 and a dielectric loss tanδ of 0.01 at 1 kHz. Ferroelectric polarization fatigue test of the films has shown that high fatigue resistance up to 3 × 1010 cycles before Pr is decreased by 50%.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong




L. S. Qiang et al., "Structure and Electrical Properties of Rapid Thermally Annealed PZT Films Deposited through Sol-Gel Process", Key Engineering Materials, Vols. 336-338, pp. 39-41, 2007

Online since:

April 2007




[1] S. O. Chung, J. W. Kim, G. H. Kim and C. O. Lee: Jpn. J. Appl. Phys. Vol. 36 (1997), p.4386.

[2] S. B. Cho, M. Oledzrd and R. E. Riman: J. Crystal Growth Vol. 226(2001), p.313.

[3] M. Zhang, X.D. Wang, F.M. Wang, et al.: Ceram. Inter. Vol. 31 (2005), p.281.

[4] T. Shiosaki, and M. Shimizu: Integrated Ferroelectrics Vol. 9 (1995), p.13.

[5] W. L. Warren, D. Dimos, H. V. Al-shareef, et al.: J. Am. Ceram. Soc. Vol. 79(1996), p.1714.

[6] J. Lee, C. L. Thio and S. B. Desu: J. Appl. Phys. Vol. 78(1995), p.5073. Fig. 5 The dielectric constant and the dielectric loss of the PZT film Fig. 6 Fatigue behaviors of the In/PZT/Pt capacitor measured at 5 V.