Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

Lee, Chong Mu; Park, Anna; Cho, Young Joon; Kim, Hyoun Woo; Lee, Jae Gab

doi:10.4028/www.scientific.net/KEM.336-338.567

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Home Key Engineering Materials High-Performance Ceramics IVCrystallinity and Photoluminescence Properties of...

Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering

Abstract:

It is very desirable to grow ZnO epitaxial films on Si substrates since Si wafers with a high quality is available and their prices are quite low. Nevertheless, it is not easy to grow ZnO films epitaxially on Si substrates directly because of formation of an amorphous SiO2 layer at the interface of ZnO and Si. A Zn film and an undoped ZnO film were deposited sequentially on an (100) Si substrate by rf magnetron sputtering. The sample was annealed at 700°C in a nitrogen atmosphere. X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM) analyses were performed to investigate the cristallinity and surface morphology of the ZnO film. According to the analysis results the crystallinity of a ZnO thin film deposited by rf magnetron sputtering is substantially improved by using a Zn buffer layer. The highest ZnO film quality is obtained with a 110nm thick Zn buffer layer. The surface roughness of the ZnO thin film increases as the Zn buffer layer thickness increases.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Main Theme:

High-Performance Ceramics IV

Edited by:

Wei Pan and Jianghong Gong

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.336-338.567

Citation:

C. M. Lee et al., "Crystallinity and Photoluminescence Properties of ZnO Films on Zn Buffer Layers Deposited by rf Magnetron Sputtering", Key Engineering Materials, Vols. 336-338, pp. 567-570, 2007

Online since:

April 2007

Authors:

Chong Mu Lee, Anna Park, Young Joon Cho, Hyoun Woo Kim, Jae Gab Lee

Keywords:

Atomic Force Microscope (AFM), PL, RF Magnetron Sputtering, X-Ray Diffraction (XRD), Zinc Oxide (ZnO), Zn Buffer Layer

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Paper TitlePages

Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC

Authors: A. Trinchi, W. Wlodarski, Sandro Santucci, D. Di Claudio, Maurizio Passacantando, C. Cantalini, B. Rout, S.J. Ippolito, K. Kalantar-Zadeh, G. Sberveglieri

Abstract: The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

123

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

Authors: Ping Luan, Jian Sheng Xie, Jin Hua Li

Abstract: Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

822

Multilayer Synthesized CuInSi Composite Film by Magnetron Sputtering

Authors: Jian Sheng Xie, Ping Luan, Jin Hua Li

Abstract: Using magnetron sputtering technology, the CuInSi nanocomposite thin films were prepared by multilayer synthesized method. The structure of CuInSi nanocomposite films was detected by X-ray diffraction (XRD), the peak of main crystal phase is at 2θ=42.180°; the morphology of the film surface was studied by SEM. The SEM images show that the crystalline of the film prepared by multilayer synthesized method was granulated, differed from the needle shape which was the morphology of the CuInSi film prepared by magnetron co-sputtering.

2770

Thin CuInSi Film Deposited by Magnetron Co-Sputtering

Authors: Jian Sheng Xie, Jin Hua Li, Ping Luan

Abstract: Thin CuInSi films have been prepared by magnetron co-sputtering, and followed by annealing in N₂ atmosphere at different temperatures. The structures of CuInSi films were detected by X-ray diffraction(XRD); X-ray diffraction studies of the annealed films indicate the presence of CuInSi, In₂O₃ and other peaks. The morphology of the film surface was studied by SEM. The band gap has been estimated from the optical absorption studies and found to be about 1.40 eV, but changes with purity of CuInSi. CuInSi thin film is a potential absorber layer material applied in solar cells and photoelectric automatic control.

302

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

Authors: Xiao Hua Sun, Shuang Hou, Zhi Meng Luo, Cai Hua Huang, Zong Zhi Hu

Abstract: Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

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