Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders

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We have prepared the gallium oxide (Ga2O3) films on sapphire substrates by a thermal evaporation of GaN powders. We have characterized the films by using the x-ray diffraction (XRD), scanning electron microscopy (SEM), and the photoluminescence (PL). SEM and XRD revealed that the deposits were Ga2O3 thin films with monoclinic structure. PL spectrum of Ga2O3 films under excitation at 325 nm showed a blue emission.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

637-639

DOI:

10.4028/www.scientific.net/KEM.336-338.637

Citation:

H. W. Kim and J. H. Myung, "Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders", Key Engineering Materials, Vols. 336-338, pp. 637-639, 2007

Online since:

April 2007

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Price:

$35.00

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