Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders


Article Preview

We have prepared the gallium oxide (Ga2O3) films on sapphire substrates by a thermal evaporation of GaN powders. We have characterized the films by using the x-ray diffraction (XRD), scanning electron microscopy (SEM), and the photoluminescence (PL). SEM and XRD revealed that the deposits were Ga2O3 thin films with monoclinic structure. PL spectrum of Ga2O3 films under excitation at 325 nm showed a blue emission.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong






H. W. Kim and J. H. Myung, "Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders", Key Engineering Materials, Vols. 336-338, pp. 637-639, 2007

Online since:

April 2007




[1] S. Geller: J. Chem. Phys. Vol. 33 (1960), p.676.

[2] T. Harwig and J. Schoonman: J. Solid State Chem. Vol. 23 (1978), p.205.

[3] M. Fleischer and H. Meixner: Sensors and Actuators B Vol. 5 (1991), p.115.

[4] M. Passlack, E. F. Schubert, W. S. Hobson, M. Hong, N. Moriya, S. N. Chu, K. Konstadinis, J. P. Mannaerts, M. L. Schnoes and G. J. Zydzik: J. Appl. Phys. Vol. 77 (1995), p.686.

[5] K. L. Chopra, S. Major and D. K. Pandya: Thin Solid Films Vol. 102 (1983), p.1.

[6] Y. X. Li, A. Trinchi, W. Wlodarski, K. Galatsis and K. Kalantar-Zadeh: Sensors and Actuators B Vol. 93 (2003), p.431.

[7] M. Ogita, K. Higo, Y. Nakanishi and Y. Hatanaka: Appl. Surf. Sci. Vol. 175-176 (2000), p.721.

[8] M. Passlack, M. Hong and J. P. Mannaerts: Appl. Phys. Lett. Vol. 68 (1996), p.1099.

[9] G. A. Battiston, R. Gerbasi, M. Porchia, R. Bertoncello and F. Caccavale: Thin Solid Films Vol. 279 (1996), p.115.

DOI: 10.1016/0040-6090(95)08161-5

[10] R. Franchy, M. Eumann and G. Schmitz: Surf. Sci. Vol. 470 (2001), p.337.

[11] R. Franchy: Surf. Sci. Rep. Vol. 38 (2000), p.195.

[12] P. Chen, R. Zhang, X. F. Xu, Y. G. Zhou, Z. Z. Chen, S. Y. Xie, W. P. Li and Y. D. Zhang: Appl. Phys. A Vol. 71 (2000), p.191.

[13] M. Orita, H. Hiramatsu, H. Ohta, M. Hirano and H. Hosono: Thin Solid Films Vol. 411 (2002), p.134.

DOI: 10.1016/s0040-6090(02)00202-x

[14] Y. Jeliazova and R. Franchy,: Surf. Sci. Vol. 527 (2003), p.57.

[15] Y. Tomm, P. Reiche, D. Klimm and T. Fukuda: J. Cryst. Growth Vol. 220 (2000), p.510.

[16] T. Harwig and F. Kellendouk: J. Solid State Chem. Vol. 24 (1978), p.255.

[17] V. I. Vasil'Tsiv, Ya. M. Zakharko and Ya. I. Prim: Ukr. Fiz. Zh. Vol. 33 (1988), p.1320.

[18] L. Binet and D. Gourier: J. Phys. Chem. Solids Vol. 59 (1998), p.1241.

[19] Y. P. Song, H. Z. Zhang, C. Lin, Y. W. Zhu, G. H. Li, F. H. Yang and D. P. Yu: Phys. Rev. B Vol. 69 (2004), p.075304. Fig. 3 PL spectrum of Ga2O3 films with an excitation wavelength at 325 nm.

In order to see related information, you need to Login.