Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate
Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganic chemical vapor deposition for using as buffer layers. Ba0.6Sr0.4TiO3 thin films were prepared on MgO/Si(100) substrate by sol-gel technique. The independence of crystallinity on annealing temperature was investigated. The Ba0.6Sr0.4TiO3 (BST) thin films are crystallized in preferential (100) orientation after post-deposition annealing at 850°C and 950°C for 2h in air, respectively. Rutherford backscattering spectroscopy analysis confirmed that both the BST and MgO films have stoichiometric composition.
Wei Pan and Jianghong Gong
X. F. Ma et al., "Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate", Key Engineering Materials, Vols. 336-338, pp. 69-72, 2007