Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate

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Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganic chemical vapor deposition for using as buffer layers. Ba0.6Sr0.4TiO3 thin films were prepared on MgO/Si(100) substrate by sol-gel technique. The independence of crystallinity on annealing temperature was investigated. The Ba0.6Sr0.4TiO3 (BST) thin films are crystallized in preferential (100) orientation after post-deposition annealing at 850°C and 950°C for 2h in air, respectively. Rutherford backscattering spectroscopy analysis confirmed that both the BST and MgO films have stoichiometric composition.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

69-72

DOI:

10.4028/www.scientific.net/KEM.336-338.69

Citation:

X. F. Ma et al., "Preferred Orientation Growth of Ba0.6Sr0.4TiO3 Thin Films with Epitaxial MgO Buffer Layer on Si(100) Substrate", Key Engineering Materials, Vols. 336-338, pp. 69-72, 2007

Online since:

April 2007

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$35.00

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