Improved Electrodeposition of CuIn1-xGaxSe2 Films
CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity.
Wei Pan and Jianghong Gong
F. Long et al., "Improved Electrodeposition of CuIn1-xGaxSe2 Films", Key Engineering Materials, Vols. 336-338, pp. 758-759, 2007