Improved Electrodeposition of CuIn1-xGaxSe2 Films

Abstract:

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CuIn1-xGaxSe2(CIGS) precursor films are fabricated on Mo foil by coelectrodeposition. The influence of the applied potential and the electrolyte additive in the process of electrodeposition are discussed. The precursor films are annealed in Ar for a short time to synthesize the polycrystalline thin film. The annealed layers are only phase-pure CuIn0.7Ga0.3Se2 and show a good crystallinity.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

758-759

DOI:

10.4028/www.scientific.net/KEM.336-338.758

Citation:

F. Long et al., "Improved Electrodeposition of CuIn1-xGaxSe2 Films", Key Engineering Materials, Vols. 336-338, pp. 758-759, 2007

Online since:

April 2007

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Price:

$35.00

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