Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films

Abstract:

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Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin films deposited at high sputtering pressure of 3.9 Pa exhibited the (110) + (200) preferred orientation. Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM morphology indicated the film was small grains and smooth.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

79-82

DOI:

10.4028/www.scientific.net/KEM.336-338.79

Citation:

T.J. Zhang et al., "Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films", Key Engineering Materials, Vols. 336-338, pp. 79-82, 2007

Online since:

April 2007

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$35.00

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