Preparation and Properties of Ni-Si-O Thin Film Prepared by Sol-Gel Method


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Ni-Si-O thin films on Si substrate have been prepared by a sol-gel method. The microstructure and phase composition of the films were investigated by XRD, SEM, FTIR. The XRD results showed that the films are amorphous while annealed at 800oC for 10 min, the SEM imagines proved that the films are smooth and thickness is about 190 nm. Electrical property of the film indicated that the leakage current was as low as 10-6A/cm2 at an electric field of 1MV/cm. The dielectric properties of Ni-Si-O thin films can be improved as increasing the annealed temperature.



Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong




R. J. Zhao et al., "Preparation and Properties of Ni-Si-O Thin Film Prepared by Sol-Gel Method", Key Engineering Materials, Vols. 336-338, pp. 799-801, 2007

Online since:

April 2007




[1] X.W. Gan, R. Huang, X.Y. Liu, X. Zhang: Nano CMOS Device (science Publications China 2004).

[2] S.K. Kim, W.D. Kim, K.M. Kim, et al.: Appl. Phys. Lett. Vol. 85 (2004), p.4112.

[3] Y. Aoki, T. Kunitake: Adv. Mater. Vol. 16 (2004) p.118.

[4] N.R. Mohapatra, M.P. Desai, et al.: IEEE Trans. on Electron Devices Vol. 49 (2002), p.826.

[5] M.M. Frank, G.D. Wilk, D. Starodub, et al.: Appl. Phys. Lett. Vol. 86 (2005) p.152904.

[6] R.F. Cava, W.F. Peck and J. J. J. Krajewski: Nature Vol. 337 (1995) p.215.

[7] J. Lin, N. Masaaki, A. Tsukune and M. Yamada: Appl. Phys. Lett. Vol. 74 (1999) p.2370.

[8] M.T. Wang, S.Y. Deng, T.H. Wang, et al.: J. Electrochem. Soc. Vol. 152(2005) pp. G542.

[9] G.D. Wilk, R.M. Wallance and J.M. Anthony: J. Appl. Phys. Vol. 87 (2000) p.484.

[10] J.B. Wu, C.W. Nan, Y.H. Lin, Y. Deng: Phys. Rev. Lett. Vol. 89 (2002) p.217601.

[11] Y.H. Lin, L. Jiang, R.J. Zhao, G. Liu and C.W. Nan: J. Phys. D. Vol. 38 (2005) p.1615.

[12] Y.H. Lin, L. Jiang, R.J. Zhao, C.W. Nan: Phys. Rev. B. Vol. 72 (2005) p.14103.

[13] T. Busani and R.A. B. Devine: J. Appl. Phys. Vol. 98 (2005) p.044102.

[14] R. Singh, R. Paily, A. DasGupta, et al.: Semicond. Sci. Tech. Vol. 20 (2005) p.38.