Large Thermoelectric Response of Ti-Containing Perovskite Oxides

Abstract:

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Nb-content dependence of the thermoelectric figure of merit, ZT of SrTiO3 at high-temperature (1000 K) is clarified using heavily Nb-doped SrTiO3 epitaxial films, which were grown on (100)-face of LaAlO3 single crystal substrates by a pulsed-laser deposition. Carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity of Nb-doped SrTiO3 epitaxial films were experimentally evaluated at 1000 K with an aid of theoretical analysis. ZT reached 0.37 (20%-Nb-doped SrTiO3 epitaxial film) at 1000 K, which is the largest value among n-type oxide semiconductors ever reported.

Info:

Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

809-813

DOI:

10.4028/www.scientific.net/KEM.336-338.809

Citation:

H. Ohta et al., "Large Thermoelectric Response of Ti-Containing Perovskite Oxides", Key Engineering Materials, Vols. 336-338, pp. 809-813, 2007

Online since:

April 2007

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Price:

$35.00

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