Thermoelectric Properties and Mechanism on Porous Silicon Wafer

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In order to improve conversion efficiency of thermoelectric materials, a designing model named Combined Model of Dense and Hollow Quantum Structures (CMDHQS) and a concept named Combined Effect of Dense and Hollow Quantum Structures (CEDHQS) have been proposed. A proof-of-concept experiment has been carried out for fabrication of porous silicon wafer with CMDHQS by physical vapor deposition and selective chemical erosion methods. By the investigation on the relation of microstructure, micro-composition and thermoelectric properties, it is found that porous silicon wafers with CMDHQS can be obtained by these two methods and have much higher thermoelectric properties than normal silicon materials, that is 3 times higher than the highest results reported, which make porous silicon become a candidate as thermoelectric materials.

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Periodical:

Key Engineering Materials (Volumes 336-338)

Edited by:

Wei Pan and Jianghong Gong

Pages:

900-904

DOI:

10.4028/www.scientific.net/KEM.336-338.900

Citation:

G. Y. Xu "Thermoelectric Properties and Mechanism on Porous Silicon Wafer", Key Engineering Materials, Vols. 336-338, pp. 900-904, 2007

Online since:

April 2007

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$35.00

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