Effect of Laser Parameters in the Micromachining of Silicon by Femtosecond Pulse Laser

Abstract:

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A 775nm femtosecond laser is applied to single crystal silicon by direct-write processing in air. A series of holes are drilled with 150fs duration pulses, various numbers of laser pulses and laser fluences on silicon wafer. Different laser parameters and material properties influence the size of fabricated holes. The diameter and depth of holes are gradually enlarged with the increase of laser fluence and pulse number. The periodic ripple structure on silicon surface is found and explained at the same time.

Info:

Periodical:

Edited by:

Shen Dong and Yingxue Yao

Pages:

136-140

DOI:

10.4028/www.scientific.net/KEM.339.136

Citation:

N. Geng et al., "Effect of Laser Parameters in the Micromachining of Silicon by Femtosecond Pulse Laser", Key Engineering Materials, Vol. 339, pp. 136-140, 2007

Online since:

May 2007

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Price:

$35.00

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