Chemical mechanical polishing (CMP) has become the preferred technology to achieve global planarization of wafer surfaces. Especially in oxide CMP, mechanical factors have a greater effect on the removal rate than chemical factors. So, the effects of mechanical parameters in CMP can be expressed as friction force and heat caused by friction. The friction force can be evaluated by a CMP friction force monitoring system and process temperature can be obtained by an infrared rays (IR) sensor. Furthermore, friction energy can be calculated from the friction force monitoring system. In this paper, research on the correlation between frictional and thermal characteristics of SiO2 slurry and CMP results was conducted. This data, which was obtained by using integrated monitoring system for CMP, will lead to the efficient prediction of CMP results.