Growth of In2O3 Thin Films on Lithium Aluminum Oxide Using a Triethylindium and Oxygen Mixture

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Indium oxide (In2O3) films were successfully grown on LiAlO2 substrates using the triethylindium (TEI) as a precursor in the presence of oxygen in the metalorganic chemical vapor deposition process. We have established the correlation between the substrate temperature and the structural properties. The grain structures were clearly shown on the surface of the films deposited at 350°C. The root mean square (RMS) surface roughness of the In2O3 films increased with increasing the substrate temperature. A photoluminescence measurement at room temperature exhibited a yellow-green emission band centered at 585 nm.

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Periodical:

Key Engineering Materials (Volumes 342-343)

Edited by:

Young-Ha Kim, Chong-Su Cho, Inn-Kyu Kang, Suk Young Kim and Oh Hyeong Kwon

Pages:

625-628

Citation:

H. W. Kim et al., "Growth of In2O3 Thin Films on Lithium Aluminum Oxide Using a Triethylindium and Oxygen Mixture", Key Engineering Materials, Vols. 342-343, pp. 625-628, 2007

Online since:

July 2007

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$38.00

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