Defects and Leakage Current in PbTiO3 Single Crystals


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Single crystals of PbTiO3 (PT) were grown by a self flux method, and effects of lattice defects on the leakage current properties were investigated. While PT crystals annealed in air at 700 oC showed a leakage current density of the order of 10-5 A/cm2, annealing under a high oxygen partial pressure of 35 MPa increased leakage current density to 10-4 A/cm2. The increase in leakage current by the oxidation treatment provides direct evidence that electron hole is a detrimental carrier for the leakage current property of PT at room temperature. The vacancies of Pb are suggested to act as an electron acceptor for generating electron holes.



Edited by:

K. Katayama, K. Kato, T. Takenaka, M. Takata and K. Shinozaki




M. Tamada et al., "Defects and Leakage Current in PbTiO3 Single Crystals", Key Engineering Materials, Vol. 350, pp. 77-80, 2007

Online since:

October 2007




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