Wettability and its Improvement at Al/SiC Interfaces

Abstract:

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The objective of the present paper is to study the wetting phenomenon and improving methods of Al/SiC interfaces. The work of adhesion and contact angle of this system was calculated theoretically from the physicochemical model. The effects of alloy elements such as Mg and the processing temperature on wettability were also investigated theoretically. Based on the theoretical calculation results, some effective methods to improve the wettability were presented.

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Periodical:

Main Theme:

Edited by:

Di Zhang, Jingkun Guo and Chi Y. A. Tsao

Pages:

52-57

DOI:

10.4028/www.scientific.net/KEM.351.52

Citation:

Q. B. Ouyang et al., "Wettability and its Improvement at Al/SiC Interfaces", Key Engineering Materials, Vol. 351, pp. 52-57, 2007

Online since:

October 2007

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$35.00

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