High Energy Planetary Ball Milling of SiC Powders


Article Preview

The effects of high-energy ball milling on SiC powders were studied using a planetary apparatus. Conditions to obtain nanostructured SiC powders with an average crystallite size of 4 nm were determined and powders were characterized by XRD, SEM and TEM analyses. This process was applied to prepare fine powders leading to dense SiC ceramics by sintering at 1900oC for 30 minutes under 30 MPa in argon.



Main Theme:

Edited by:

Di Zhang, Jingkun Guo and Chi Y. A. Tsao




Y. B. Pan et al., "High Energy Planetary Ball Milling of SiC Powders", Key Engineering Materials, Vol. 351, pp. 7-14, 2007

Online since:

October 2007




[1] Prochaska, S., The role of boron and carbon in sintering of silicon carbide. Special Ceramics 6, Popper, P., ed. The British Ceramic Research Association, Stoke-on-Trent, U.K., pp.171-81, (1975).

[2] Suzuki, K. and Sasaki, M., Pressureless sintering of silicon carbide. In Fundamental Structural Ceramics, ed. S. Somiya and R. C. Bradt. Terra Scientific Publishing Company, Tokyo, Japan, 1987, pp.75-87.

[3] Padture, N. P., In situ-toughened silicon carbide. J. Am. Ceram. Soc., 1994, 77, 519-523.

[4] Padture, N. P. and Lawn, B. R., Toughness properties of a silicon carbide with in situ-induced heterogeneous grain structure. J. Am. Ceram. Soc., 1994, 77, 2518-2522.

[5] Lee, S. K. and Lee, C. H., Effects of a-SiC versus b-SiC starting powders on microstructure and fracture-toughness of SiC sintered with Al2O3-Y2O3 additives. J. Am. Ceram. Soc., 1994, 77, 1655-1658.

DOI: https://doi.org/10.1111/j.1151-2916.1994.tb09771.x