Formation and Sintering Mechanisms of Reaction Bonded Silicon Carbide-Boron Carbide Composites

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Reaction sintering of boron carbide represents an attractive densification process. In this work, sintering mechanisms of silicon carbide and boron carbide composites were studied. Mixed boron carbide/graphite mixtures were sintered in a vacuumed graphite furnace between 1380 and 1450oC. The samples were in contact with bulk silicon metal which melts at 1410oC. Reaction sequence of the composition was investigated by X-ray diffraction, SEM and TEM. It was found that a reaction between molten silicon and B4C occurred and the reaction produced silicon carbide and silicon-containing boron carbide. Dense composites can be achieved by pressureless sintering at 1450oC and the final microstructure consists of silicon carbide, boron carbide, silicon-containing boron carbide and residual silicon at grain boundaries.

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Edited by:

Katsutoshi Komeya, Yohtaro Matsuo and Takashi Goto

Pages:

207-212

Citation:

Z. F. Chen et al., "Formation and Sintering Mechanisms of Reaction Bonded Silicon Carbide-Boron Carbide Composites", Key Engineering Materials, Vol. 352, pp. 207-212, 2007

Online since:

August 2007

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$38.00

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