Abstract: Ca-Ti-O films were prepared by MOCVD using Ca(dpm)2 and Ti(OiPr)2(dpm)2
precursors. The phases, composition and morphology of Ca-Ti-O films changed depending on the
molar ratio of Ca to Ti precursors (RCa/Ti), total pressure (Ptot) and substrate temperature (Tsub).
CaTiO3 films in a single phase were obtained at Tsub = 973 and 1073 K. CaTiO3 films prepared at 873
K had a dense structure and smooth surface. CaTiO3 films prepared at Tsub = 1073 K had complicated
rough surface with a cauliflower-like texture. Hydroxyapatite (HAp) formed in 3 days on the CaTiO3
film prepared at Tsub = 1073 K.
Abstract: Calcium phosphate coating films were fabricated on mirror-polished or blast-treated
titanium substrates using radio-frequency (RF) magnetron sputtering and they were evaluated in vitro.
Immersion tests for the films were conducted using phosphate-buffered saline (PBS(-)), and apatite
formation and the elution of calcium ions from the films were investigated. The bonding strengths
between the calcium phosphate films and titanium substrates before and after the immersion tests
were evaluated. After the immersion tests, a decrease in the bonding strength was observed for the
coating films on the mirror-polished titanium substrates, while that for the blast-treated titanium
substrates was almost the same as that before the immersion tests.
Abstract: A new lead-free ferroelectric BaTi2O5 film was first prepared by laser ablation. BaTi2O5
films in a single phase were obtained at substrate temperatures (Tsub) from 900 to 1050 K and oxygen
partial pressures (PO2) from vacuum (10-6 Pa) to 30 Pa. The films exhibited a (710) and/or (020)
preferred orientation, depending on Tsub and PO2. At PO2 = 12.5 Pa and Tsub = 950 - 1000 K, the
BaTi2O5 film was b-axis oriented and epitaxially grown on MgO (100) substrate with a rectangularly
crossed texture. The epitaxial growth relationship between the film and the substrate were BaTi2O5
(020)  // MgO (100)  and BaTi2O5 (020)  // MgO (100) .
Abstract: Epitaxial BaRuO3 (BRO) and CaRuO3 (CRO) thin films were prepared on (001), (110) and
(111) SrTiO3 (STO) single-crystal substrates by laser ablation, and their microstructures and
anisotropy of electrical conductivity were investigated. The (205) (104), (110) and (009) oriented
BRO thin films, and (001), (110) and (110) oriented CRO thin films were grown epitaxially on (001),
(110) and (111) STO substrates with in-plain orientation, respectively. The (009) BRO thin film and
(001) CRO thin film has a flat surface result from a good lattice matching to STO substrates. The
(205) (104) BRO thin film and (111) CRO thin film exhibited orthogonal- and hexagonal-shaped
texture, respectively. The (110) BRO thin film and (110) CRO thin film showed an island growth due
to (110) surface feature of cubic perovskite structure. Epitaxial BRO and CRO thin films have a high
electrical conductivity with a metallic conduction, the (111) CRO thin films exhibited the highest
conductivity of 1.4×105 S·m-1.
Abstract: Ruthenium-Carbon (Ru-C) nano-composite films were prepared by microwave-induced
plasma-enhanced chemical vapor deposition (PECVD) and the effects of deposition conditions on the
microstructure and electrical properties were investigated. The films consisted of agglomerated
grains of 10 to 20 nm in diameter, in which Ru particles of 2.5 to 3.5 nm in diameter were dispersed in
an amorphous C matrix. The C contents of the films ranged from 86 to 94 vol%. The electrical
properties of Ru-C nano-composite films as a catalytic electrode for an yttria-stabilized zirconia
(YSZ) solid electrolyte were evaluated by AC impedance spectroscopy. The electrical conductivity at
the Ru-C/YSZ interface (σi) was 0.2 × 10-3 Sm-1 at 500 K and increased with increasing temperature.
The activation energy of the σi was 70 kJ/mol. Electro-motive-force (EMF) values of an oxygen
concentration cell constructed from YSZ electrolyte and Ru-C nano-composite electrodes responded
to the change of oxygen partial pressure above 473 K. The response time of the concentration cell was
less than 10 s above 573 K.