Effect of R.F. Power on Structures and Properties of Amorphous Fluorinated Carbon Films Prepared by PSII


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Fluorinated amorphous carbon films (a-C:H:F) were deposited by plasma source ion implantation (PSII) with precursor gas of CH2FCF3 + C2H2 + H2 with various radio frequency (r.f.) power. Structures and properties evolution varied with r.f. power was discussed in detail. X-ray photoelectron spectroscopy (XPS), Raman spectrum, X-Ray reflection(XRR), atomic force microscopy (AFM) were used to analyze composition, chemical state, sp2 cluster structure, density and surface morphology of prepared films. Nano-indentation test was used to get hardness and modulus. The results show that with the increase of r.f. power, the size and amount of sp2 cluster increase, so does the surface roughness; however, the density and the hardness of films decrease.



Key Engineering Materials (Volumes 353-358)

Edited by:

Yu Zhou, Shan-Tung Tu and Xishan Xie




G. Z. Tang et al., "Effect of R.F. Power on Structures and Properties of Amorphous Fluorinated Carbon Films Prepared by PSII", Key Engineering Materials, Vols. 353-358, pp. 1829-1832, 2007

Online since:

September 2007




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