Microstructure and Resistivity of Low Temperature Deposition ITO Films on PET Substrate by Magnetron Sputtering


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Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET) substrate by magnetron sputtering at low deposition temperature using a 10 wt % SnO2-doped In2O3 target applied in the infrared regions as low emissivity materials. The microstructure and surface morphology of ITO films was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM); the resistivity was investigated by four-point probe technology. It was found that the film with amorphous microstructure has highest resistivity to 1.956×10-3 2.cm at low deposition temperature and the surface roughness and resistivity increase with the increasing Ar sputtering pressure from 0.5Pa to 1.4Pa. The most interesting is that the resistivity increases with the increasing surface roughness, it indicates that there are internal correlation between roughness and resistivity.



Key Engineering Materials (Volumes 353-358)

Edited by:

Yu Zhou, Shan-Tung Tu and Xishan Xie




X. L. Weng et al., "Microstructure and Resistivity of Low Temperature Deposition ITO Films on PET Substrate by Magnetron Sputtering", Key Engineering Materials, Vols. 353-358, pp. 1867-1870, 2007

Online since:

September 2007




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