XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films

Abstract:

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Sputter deposited SiC films with and without annealing were characterized using X-ray photoelectron spectroscopy (XPS). A complex transition layer, containing silicon oxycarbide (SiCxOy), between the SiO2 layer grown during extended exposure to ambient air or annealing and SiC substrate was investigated. Furthermore, the presence of excessive amorphous carbon was detected in the near-surface region for annealed sample. We justified the differences of composition and chemical bonding in these two oxide layers in terms of different oxidation kinetics involved.

Info:

Periodical:

Key Engineering Materials (Volumes 353-358)

Edited by:

Yu Zhou, Shan-Tung Tu and Xishan Xie

Pages:

1871-1874

DOI:

10.4028/www.scientific.net/KEM.353-358.1871

Citation:

K. Xue et al., "XPS Analysis of Silicon Oxycarbide Formed on the Surface of Rf-Sputter Deposited SiC Thin Films", Key Engineering Materials, Vols. 353-358, pp. 1871-1874, 2007

Online since:

September 2007

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Price:

$35.00

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