Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures

Abstract:

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Formation, propagation and length of crack and hardness of single silicon wafer were investigated at different temperatures by means of Vickers indentation, using lower temperature testing unit with semiconductor refrigerating chip and higher temperature testing unit with closed electric furnace. The results show that the hardness of single silicon wafer decreases with the increase of temperature, while the length of crack increases with the increase of temperature. Ductile-brittle transition of the single silicon wafer can occur at different temperatures with the increase of load. When the load is smaller and temperature is lower, no cracks can be found.

Info:

Periodical:

Key Engineering Materials (Volumes 359-360)

Edited by:

Jiuhua Xu, Xipeng Xu, Guangqi Cai and Renke Kang

Pages:

1-5

DOI:

10.4028/www.scientific.net/KEM.359-360.1

Citation:

Y. L. Sun et al., "Mechanism of Brittle-Ductile Transition of Single Silicon Wafer at Different Temperatures ", Key Engineering Materials, Vols. 359-360, pp. 1-5, 2008

Online since:

November 2007

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Price:

$35.00

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