Study on Pad Conditioning Parameters in Silicon Wafer CMP Process


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Polishing pad plays a key role in determining polish rate and planarity of a chemical mechanical planarization (CMP). The properties of the pad would deteriorate during polishing because of pad surface grazing, which results in reduced removal rates and poorer planarity of wafer surface. Pad conditioning and its influence on pad surface structure and CMP process is introduced and discussed in this paper. The study shows that the surface structure can be regenerated by breaking up the glazed areas with conditioner, MRR(Material Removal Rate) can be maintained at high level with proper pad conditioning, and UN(Non-uniformity)can also improved. Orthogonal experiments design is employed in this study to determine the best conditioning parameters.



Key Engineering Materials (Volumes 359-360)

Edited by:

Jiuhua Xu, Xipeng Xu, Guangqi Cai and Renke Kang




Z. Z. Zhou et al., "Study on Pad Conditioning Parameters in Silicon Wafer CMP Process", Key Engineering Materials, Vols. 359-360, pp. 309-313, 2008

Online since:

November 2007




[1] R. Dejule: Semicond. Int, (1997) No. 5, pp.54-60.

[2] G.B. Basim, J.J. Adler, U. Mahajan, R.K. Singh B.M. Moudgil: Electrochem. Soc, Vol. 147 (2000) No. 9, pp.3523-3528.

[3] John McGrath, Chris Davis : Journal of Materials Processing Technology, Vol. 153-154 (2004) pp.666-673.

[4] B.J. Hooper, G. Byrne, S. Galligan: Mater. Process. Technol., Vol. 123 (2002) No. 9, pp.107-113.

[5] J. Sung, Y.L. Pai. CMP Pad Dresser: The Society of Grinding Engineers, Vol. 150 (2000) pp.189-196.

[6] P.J. Ross: Taguchi Techniques for Quality Engineering(McGraw-Hill Press, Amercia 1996), pp.102-111.

[7] Genichi Taguchi: Taguchi Method-Research and Development (ASI Press, Amercia 1992), pp.88-96.