Study on Removal Mechanism of Fixed-Abrasive Diamond Wire Saw Slicing Monocrystalline Silicon


Article Preview

The physical model of fixed-abrasive diamond wire-sawing monocrystalline silicon was founded to analyze the elastic deformation of the wire, supposing that every grit was connected to the surface of the wire by a spring. Ignoring lateral vibration of the wire, the geometrical model of wire-sawing was founded; the average cut depth of single grit was calculated theoretically. Based the indentation fracture mechanics and investigations on brittle-ductile transition of machining monocrystalline silicon, the removal mechanism and surface formation was studied theoretically. It shows that in the case of wire-sawing velocity of 10m/s or higher, infeed velocity of 0.20mm/s and diamond grain size of 64μm or smaller, the chip formation and material removal is in a brittle regime mainly, but the silicon wafer surface formation is sawed in a ductile regime. The size of the abrasives, the wire-saw velocity and infeed velocity can influence the sawing process obviously.



Key Engineering Materials (Volumes 359-360)

Edited by:

Jiuhua Xu, Xipeng Xu, Guangqi Cai and Renke Kang




Y. F. Gao et al., "Study on Removal Mechanism of Fixed-Abrasive Diamond Wire Saw Slicing Monocrystalline Silicon ", Key Engineering Materials, Vols. 359-360, pp. 450-454, 2008

Online since:

November 2007




[1] P.Q. Ge, J.F. Meng, J.H. Chen and L.C. Zhang: Tool Engineering, Vol. 39 (2005) No. 9, pp.3-5. (In Chinese).

[2] M. Bhagavat: Computation Modeling of Free Abrasive Machining in Wiresaw Slicing (Ph.D. Dissertation, State University of New York, USA 2000), pp.43-51.

[3] M. Bhagavat, V. Prasad and I. Kao: Journal of Tribology, Vol. 122 (2000) No. 4, pp.394-404.

[4] B.P. O'Connor, E.R. Marsh and J.A. Couey: Precision Engineering, Vol. 29 (2000) No. 5, pp.124-132.

[5] K. Liu, X.P. Li, M. Rahman, X.D. Liu and L.C. Lee: Electronics Packaging Technology Conference (Singapore, Dec. 10-12, 2002). pp.200-205.

[6] J.F. Liu: The Study on Stress Field and Damage Layer of Monocrystalline Silicon Cutting Using Wire Saw (MS. Dissertation, Shandong University, China 2006), pp.10-11.