Thermal-Hygro-Mechanical Design for CMOS Image Sensor

Abstract:

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The characteristic of overall structure for CMOS image sensor has been studied in this research. A three-dimensional solid model of CMOS image sensor based on finite element ANSYS software is developed to predict the thermo-induced strain and the stress induced by moisture absorption. The predicted thermal-induced displacements were found to be very good agreement with the Moiré interferometer experimental in-plane deformation. The developed finite element 3D model, therefore, is applied to simulate the mechanism of thermal and hygroscopic stresses based on JEDEC pre-condition standard JESD22-A120. A series of comprehensive parametric studies were conducted in this research. The design rules for thermal optimization of CMOS image senor are summarized.

Info:

Periodical:

Key Engineering Materials (Volumes 364-366)

Edited by:

Guo Fan JIN, Wing Bun LEE, Chi Fai CHEUNG and Suet TO

Pages:

1151-1156

DOI:

10.4028/www.scientific.net/KEM.364-366.1151

Citation:

H. C. Hsu et al., "Thermal-Hygro-Mechanical Design for CMOS Image Sensor ", Key Engineering Materials, Vols. 364-366, pp. 1151-1156, 2008

Online since:

December 2007

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Price:

$35.00

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