Research on Quick Polishing of CVD Diamond Film


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Polycrystalline CVD diamond film possesses many advanced physical and mechanical properties which makes it a very important engineering material. However, high hardness value and extreme brittleness have made CVD diamond film a very difficult material to be machined by conventional grinding and polishing processes. In the present research, diamond wafers were pretreated with RIE in an attempt to weaken the top layer and pave the way for subsequent thermochemically polishing. It was found that the diamond grains were anisotropically etched and some high aspect ratio pillar-like micro-structures were formed during the RIE process. These micropillars are relatively easy to be ruptured and removed by the subsequent polishing process. The results showed that this method could effectively speed up the polishing of CVD diamond films.



Key Engineering Materials (Volumes 364-366)

Edited by:

Guo Fan JIN, Wing Bun LEE, Chi Fai CHEUNG and Suet TO




C. L. Chao et al., "Research on Quick Polishing of CVD Diamond Film", Key Engineering Materials, Vols. 364-366, pp. 668-673, 2008

Online since:

December 2007




[1] Prelas A.M., Popovici G. and Bigelow K.L., Handbook of industrial diamond and diamond films, Marcel Dekker Inc., (1998).

[2] H.O. Pierson, Handbook of carbon, graphite, diamond and fullerences properties, processing and applications, Noyes Publications, Park Ridge, New Jersey, U.S.A., (1993).

[3] Ollison C.D., Brown W.D., Malshe A.P., Naseem H.A. and Ang S.S., Diamond and Related Materials 8 (1999) p.1083.

[4] Van Bouwelen F.M., Diamond and Related Materials 9 (2000) p.925.

[5] Johnson C.E., Surface and Coatings Technology, 68/69 (1994) p.374.

[6] Chao C.L., Ma K.J., Liu Y.H., Chen T.T., Lin H.Y. and Chang Y.M., ASPE 17 th Annual Meeting, 2002, St. Louis, USA.

[7] Hsieh C.H., Tsai H.Y., Lai H.T. and Lin H.Y., Proc. of SPIE Vol. 4936, p.337.

[8] Chao C.L., Chou W.C., Ma K.J., Chen T.T., Liu Y.M., Huang S.W. and Lin H.Y., The 3rd International Conference on Leading Edge Manufacturing in the 21st Century, (2005).

[9] Chan S.S.M., Whitfield M.D., Jackman R.B., Arthur G., Goodall F. and Lawes R.A., Semicond. Sci. Technol. 18 (2003) S47-S58.

[10] Leech P.W., Reeves G.K., Holland A.S. and Shanks F., Diamond and Related Materials 11 (2002) p.833.

[11] Bernard M., Deneuville A., Ortega L., Ayadi K. and Muret P., Diamond and Related Materials 13 (2004) p.287.


[12] Ando Y., Nishibayashi Y. and Sawabe A., Diamond and Related Materials 13 (2004), p.633.

[13] Ando Y., Nishibayashi Y., Kobashi K., Hirao T. and Oura K., Diamond and Related Materials 11 (2002), p.824.


[14] Gopi M.R. Sirineni, Naseem H.A., Malshe A.P., Brown W.D., Diamond and Related Materials 6 (1997), p.952.

[15] Ollision C.D., Brown W.D., Malshe A.P., Naseem H.A., and Ang S.S., Diamond and Related Materials 8 (1999), p.1083.