Structure and Dielectric Properties of AlN Multilayered Film on Al Substrate

Abstract:

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AlN multilayered films were deposited on Al substrates using RF reactive magnetron sputtering with Al targets under Ar and N2 atmosphere. Circles of deposition and annealing were repeatedly performed. Macrostructure observations, crystallographic analyses and dielectric property measurements were carried out. The grains of AlN film had a worm-like shape. When the number of layers (and cycles) increased, the (100) and (110) oriented grains weakened and the structure of film changed into (002) and (101) oriented. The capacity–frequency (C-f) curves of Cu-AlN-Al-Cu capacitors, measured at 100 Hz - 1 MHz, showed that the dielectric constant and the dielectric loss of AlN decrease with increasing number of cycles, attributed to annealing processes that influences film microstructure and the orientation of worm-like shape grains.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

1383-1385

DOI:

10.4028/www.scientific.net/KEM.368-372.1383

Citation:

X. F. Song et al., "Structure and Dielectric Properties of AlN Multilayered Film on Al Substrate", Key Engineering Materials, Vols. 368-372, pp. 1383-1385, 2008

Online since:

February 2008

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Price:

$35.00

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