BiFeO3 films were prepared by chemical solution method on Pt/Ti/SiO2/Si substrates. The ferroelectric properties of Pt/BiFeO3/Pt capacitors were investigated, and the effect of recovery annealing applied after Pt top electrode deposition was discussed. The pure phase film with recovery annealing exhibits lower leakage current and higher remanent polarization than those without post-annealing. The leakage current is reduced by three orders of magnitude, the remanent polarization increases from 2.59μC/cm2 to 3.44μC/cm2. The recovery anneals applied after top electrode deposition may optimize the ferroelectric performance by removing the effect of structural defects formed by sputtering.