Interfacial Behavior of SiC-Based Boundary Layer Capacitors
SiC-based boundary layer capacitors were prepared by hot pressing. XRD, TEM and the high-resolution TEM techniques were used to characterize the sintered samples. It was found that the width of the grain boundary within the SiC-based boundary capacitors was about 200 nm. Extremely high dielectric constant of >2,400,000 appeared in a wide temperature range from 590oC to 730oC, with the maximum of >2,900,000. The critical temperature was about 500oC. Space charge polarization was detected as the temperature increased. Nano grains in the boundary phase were observed, which might enhance the space charge behavior.
Wei Pan and Jianghong Gong
R. Zhang et al., "Interfacial Behavior of SiC-Based Boundary Layer Capacitors", Key Engineering Materials, Vols. 368-372, pp. 235-237, 2008