Manganite-Based Heterojunction Position-Sensitive Detectors


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Position-sensitive photodetectors, a useful class of sensor with a wide range of applications in automatization and measuring techniques, on the basis of a La0.7Sr0.3MnO3/Si heterojunction have been developed. Thin p-La0.7Sr0.3MnO3 films were grown on n-Si substrates by laser molecular beam epitaxy. The large lateral photovoltaic effect has been observed in response to excitation by ultraviolet laser spot irradiation. The position characteristics are symmetric to the zero and linear between the contacts. The devices work well under unbiased conditions and so are simple to configure for practical applications.



Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong




K. Zhao et al., "Manganite-Based Heterojunction Position-Sensitive Detectors", Key Engineering Materials, Vols. 368-372, pp. 345-347, 2008

Online since:

February 2008




[1] W. Schottky: Phys. Z Vol. 31 (1930), p.913.

[2] J.T. Wallmark: Proc. IRE Vol. 45 (1957), p.474.

[3] S. Jin, T.H. Tiefel, M. McCormack, R.A. Fastnacht, et al.: Science Vol. 264 (1994), p.413.

[4] A. Asamitsu, Y. Tomioka, H. Kuwahara and Y. Tokura: Nature Vol. 388 (1997), p.50.

[5] M. Fiebig, K. Miyano, Y. Tomioka and Y. Tokura: Science Vol. 280 (1998), p. (1925).

[6] C. Mitra, P. Raychaudhuri, G. Kobernik, et al.: Appl. Phys. Lett. Vol. 79 (2001), p.2408.

[7] H. Tanaka, J. Zhang and T. Kawai: Phys. Rev. Lett. Vol. 88 (2002), p.027204.

[8] H.B. Lu, K. -J. Jin, Y.H. Huang, et al.: Appl. Phys. Lett. Vol. 86 (2005), p.241915.

[9] T. Muramatsu, Y. Muraoka and Z. Hiroi: Solid State Commun. Vol. 132 (2004), p.351.

[10] G.Z. Yang, H.B. Lu, F. Chen, et al.: J. Cryst. Growth Vol. 227-228 (2001), p.929 Fig. 3 Absorption spectra of LSMO (400 nm)/Si and Si substrate. The inset displays the peak LPV of Si substrate.