Electrical Properties of Sb-Doped BaPbO3 Ceramics


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Sb-doped BaPbO3 ceramics were prepared by sol-gel method. The influence of Pb/Ba ratio and Sb concentration on the electrical properties of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0≤y≤0.2) compositions were investigated. Holes and Pb vacancies were the major defects in lightly donor-doped BaPbO3, where the increase of donor concentration resulted in decrease of charge carriers (holes), leading to resistivity increasing. In the highly donor-doped conditions, the microstructure or solid solubility substituted defect structure as the main factor affecting the variety of resistivity. The lowest electrical resistivity of Sb-doped BaPbO3 was 2.69 × 10-4 /·cm when the Sb concentration y=0.12~0.13. Excess of Pb causes the born of barium vacancies. And, the observed PTCR behavior of BaPb1.2O3 involves the Barium vacancies in grain boundaries. 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior and its Curie temperature was about 850°C.



Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong




X. Wang et al., "Electrical Properties of Sb-Doped BaPbO3 Ceramics", Key Engineering Materials, Vols. 368-372, pp. 653-655, 2008

Online since:

February 2008




[1] T. Kodenkandath: Mater. Chem. Phys. Vol. 62 (2000), p.23.

[2] R.J. Cava, H. Takagi, H.W. Zandbergen, et al.: Phys. Rev. Vol. B46 (1992), p.101.

[3] Y.R. Luo and J. M. Wu: Appl. Phys. Lett. Vol. 11 (2001), p.3669.

[4] W.H. Kao, S. L. Haberichter and K.R. Bullock: J. Electrochem. Soc. Vol. 139(1992), p. L105.

[5] B.V. Hiremath, R.E. Newnham and L. E. Cross: J. Am. Ceram. Soc. Vol. 75(1992), p.2953.

[6] H. Nagamoto, H. Kagotani and T. Okubo: J. Am. Ceram. Soc. Vol. 76(1993), p. (2053).

[7] Y. Kodama, N. Murayaman and Y. Torii: J. Mater. Sci. Lett. Vol. 17 (1998), p. (1999).

[8] F.M. Mulder and R.C. Thiel: Phys. C - Superconductivity, Vol. 201(1992), p.80.

[9] C.L. Sun, H.W. Wang, M.C. Chang, et al.: Mater. Chem. Phys. Vol. 78 (2003), p.507.

[10] Y.D. Lu: Ph.D. Thesis (South China University of Technology, Guangzhou, China, 2007).

[11] J. Daniels and R. Wernicke: Philips Res. Repts. Vol. 31(1976), p.544. Fig. 4 Sb concentration dependence of room-temperature resistivity for Sb-doped BaPbO3 Fig. 5 Measured values of resistivity versus temperature in Sb-doped BaPbO3.