P-Type Transparent Conductivity of Cu1-xAlS2 (x = 0 ~ 0.08)


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A series of Cu1-xAlS2 (x = 0 ~ 0.08) bulk samples were synthesized by spark plasma sintering. The electrical and optical properties were investigated. P-type conductions for all samples were confirmed by both positive Seebeck coefficient and Hall coefficient. Bulk undoped CuAlS2 had a high conductivity of about 0.9 S/cm with a large band gap of 3.4 eV at room temperature. For vacancy-doped in Cu site, the carrier concentration was highly enhanced, reaching 1.7 × 1019 cm-3 for 8 mol% doped sample, and without decreasing the bang gap. The introduction of vacancies destroys the continuity of Cu-S network, which decreases the Hall mobility.



Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong




M. L. Liu et al., "P-Type Transparent Conductivity of Cu1-xAlS2 (x = 0 ~ 0.08)", Key Engineering Materials, Vols. 368-372, pp. 666-668, 2008

Online since:

February 2008




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DOI: 10.1016/b978-0-08-017883-7.50009-3

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