Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films
Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.
Wei Pan and Jianghong Gong
Y.H. Sun et al., "Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vols. 368-372, pp. 82-84, 2008