Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films

Abstract:

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Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

82-84

DOI:

10.4028/www.scientific.net/KEM.368-372.82

Citation:

Y.H. Sun et al., "Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vols. 368-372, pp. 82-84, 2008

Online since:

February 2008

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$35.00

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