Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films


Article Preview

Tb-doped bismuth titanate (BixTbyTi3O12: BTT) and pure Bi4Ti3O12 (BIT) thin films with random orientation were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well-developed rod-like grains with random orientation. Tb doping into BIT caused a large shift of the Curie temperature (TC) from 675°C to lower temperature. The experimental results indicated that Tb doping into BIT result in a remarkable improvement in dielectric property.



Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong




Y.H. Sun et al., "Electrical Characterization and Microstructures of Tb-Doped Bi4Ti3O12 Thin Films", Key Engineering Materials, Vols. 368-372, pp. 82-84, 2008

Online since:

February 2008




[1] J. F. Scott: Jpn. J. Appl. Phys. Vol. 38 (1999), p.2272.

[2] Y.I. Sook and M. Miyayama: Mater. Res. Bull. Vol. 32 (1997), p.1349.

[3] C.J. Kim and S.G. Hong: Thin Solid Films Vol. 365 (2000), p.58.

[4] X.S. Wang, J.W. Zhai, L.Y. Zhang and X. Yao: Infrared Phys. Tech. Vol. 40 (1999), p.55.

[5] C. Voisard, D. Damjanovic and N. Setter: J. Eur. Ceramic Soc. Vol. 19 (1999), p.1251.

[6] Z. Simoes, C. Quinelato, A. Ries and B. D Stojanovic: Mater. Chem. Phys. Vol. 98 (2006), p.481.

[7] Y. C. Chang and D. H. Kuo: Thin Solid Films, Vol. 515 (2006), p.1683.

[8] T, F, Watanabe and H. Osada: Appl. Phys. Lett. Vol. 80 (2002), p.2229.

[9] H. Uchida, H. Yoshikawa and I. Okada: Appl. Phys. Lett. Vol. 81 (2003), p.2229 Fig. 4. The Raman spectrum of the BIT and BTT (y = 0. 6) films.