Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films


Article Preview

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.



Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong




S. Chen et al., "Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films", Key Engineering Materials, Vols. 368-372, pp. 91-94, 2008

Online since:

February 2008




[1] Auciello and R. mesh: Mater. Res. Bull. Vol. 21 (1996), p.31.

[2] P.C. Joshi and S.B. Krupanidhi: Appl. Phys. Lett. Vol. 62 (1993), p. (1928).

[3] B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee and W. Jo: Nature Vol. 401 (1999), p.682.

[4] T. Kojima, T. Sakai, T. Watanabe, H. Funakubo, K. Saito and M. Osada: Appl. Phys. Lett. Vol. 80 (2002), p.2746.

[5] H.N. Lee, D. Hesse, N. Zakharow and U. Gosele: Science Vol. 296 (2002), (2006).

[6] H. Uchida, H. Yoshikawa, I. Okada, H. Matsuda, T. Lijima, T. Watanabe, T. Kojima and H. Funakubo: Appl. Phys. Lett. Vol. 81 (2002), p.2229.

[7] Y. Noguchi and M. Miyayama: Appl. Phys. Lett. Vol. 78(2001), p. (1903).

[8] T. Watanabe, H. funaubo, M. Osada, Y. Noguchi and M. Miyayama: Appl. Phys. Lett. Vol. 80 (2002), p.100.

[9] U. Chon, K. kim, H.M. Jang and G. Yi: Appl. Phys. Lett. Vol. 79 (2001), p.3137.

Fetching data from Crossref.
This may take some time to load.