Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

Abstract:

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Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.

Info:

Periodical:

Key Engineering Materials (Volumes 368-372)

Edited by:

Wei Pan and Jianghong Gong

Pages:

91-94

DOI:

10.4028/www.scientific.net/KEM.368-372.91

Citation:

S. Chen et al., "Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films", Key Engineering Materials, Vols. 368-372, pp. 91-94, 2008

Online since:

February 2008

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$35.00

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