Self-Assembled Monolayers of Schiff Base on the Surfaces of Oxidized Copper


Article Preview

The Self-assembled monolayers (SAMs) of Schiff base had been formed on oxidized surfaces of copper. Schiff base used in this paper is N-2-hydroxyphenyl- (3-methoxy-salicylidenimine), designated V-bso. X-ray photoelectron spectroscopy (XPS), polarization curves, electrochemistry impedance spectroscopy (EIS) and the interface capacitance measurements have been employed to investigate the structure, formation and composition of these monolayers. XPS analysis show that the valence of the copper in the surface films is +2. The polarization curves and the EIS results indicate that the films of CuO, V-bso, and V-bso modified oxidized copper all have good corrosion inhibition efficiency. The IE of the V-bso modified oxidized copper is higher than that of the V-bso modified copper and the oxidized copper layer, just because the former has two layers. The results of the interface capacitance show that the self-assemble films of the V-bso on the oxidized copper surface have good potential stability.



Key Engineering Materials (Volumes 373-374)

Main Theme:

Edited by:

M.K. Lei, X.P. Zhu, K.W. Xu and B.S. Xu




D. G. Li et al., "Self-Assembled Monolayers of Schiff Base on the Surfaces of Oxidized Copper ", Key Engineering Materials, Vols. 373-374, pp. 649-653, 2008

Online since:

March 2008




[1] M. Itoh, H. Nishihara, K. Aramaki: J. Electrochem. Soc. Vol. 142 (1995), p.3696.

[2] E. Geler and D. S. Azambuja: Corros. Sci. Vol. 42 (2000), p.631.

[3] I. Popova and J. T. Yates Jr: Langmuir, Vol. 13 (1997), p.6169.

[4] S. L. Li, H. Y. Ma, S. B. Lei, R. Yu, S. H. Chen, D. X. Liu: Corrosion, Vol. 54 (1998), p.947.

[5] Z. L. Quan, S. H. Chen, and S. L. Li: Corros. Sci. Vol. 43 (2001), p.1071.

[6] Z. L. Quan, S. H. Chen, Y. Li, and X. G. Cui: Corros. Sci. Vol. 44 (2002), p.703.

[7] Y. Feng, W. K. Teo, K. S. Siow, Z. Q. Gao, K. L. Tan, A. K. Hsieh: J. Electrochem. Soc. Vol. 144 (1997), p.55.

[8] M. M. Sung, K. Sung, C. G. Kim, S. S. Lee, Y. Kim: J. Phys. Chem. B, Vol. 104 (2000), p.2273.

[9] S. J. Wang, and C. K. Ong: Appl. Phys. Lett. Vol. 80-14 (2002), p.2541.

[10] Z. L. Quan, S. H. Chen, L. Hua, S. B. Lei, and X. G. Cui: Chinese Science Bulletin, Vol. 47(2002), p.990.

[11] H. Y. Ma, G. Q. Li, S. H. Chen, S. Y. Zhao, and X. L. Cheng: Corros. Sci. Vol. 44 (2002), p.1177.

[12] A. V. Benedetti, P. T. A. Sumodjo, K. Nobe, P. L. Cabot and W. G. Proud: Electrochim. Acta, Vol. 40 (1995), p.2657.

[13] H. Y. Ma, S. H. Chen, L. Niu, S. X. Shang, S. L. Li, S. Y. Zhao, Z. L. Quan: J. Electrochem. Soc. Vol. 148 (2001), p. B208.

[14] S. L. Li, S. H. Chen, S. B. Lei, H. Y Ma, R. Yu, D.X. Liu: Corros. Sci. Vol. 41 (1999), p.1273.

Fetching data from Crossref.
This may take some time to load.