Study on Brittle-Ductile Transition Mechanism of Ultra-Precision Turning of Single Crystal Silicon

Abstract:

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According to the size effect theory established on the concept of geometrically necessary dislocations and results of nano-indentation experiments, a novel brittle-ductile mechanism of ultra-precision turning of single crystal silicon is proposed. The accurate critical chip thickness is firstly calculated on the basis of theoritical analysis. A macro-micro cutting model is created based on the brittle-ductile transition mechanism. Finally, the results of study are testified through experiments.

Info:

Periodical:

Key Engineering Materials (Volumes 375-376)

Edited by:

Yingxue Yao, Xipeng Xu and Dunwen Zuo

Pages:

11-16

DOI:

10.4028/www.scientific.net/KEM.375-376.11

Citation:

M. H. Wang and Z. S. Lu, "Study on Brittle-Ductile Transition Mechanism of Ultra-Precision Turning of Single Crystal Silicon ", Key Engineering Materials, Vols. 375-376, pp. 11-16, 2008

Online since:

March 2008

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Price:

$35.00

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