Study on Adhesion Removal Model in CMP SiO2 ILD

Abstract:

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In the process of CMP SiO2 ILD, the nano-particle with high surface energy in slurry has an essential impact on the efficiency and quality of CMP. In this paper the mode of nano-particle on the surface of SiO2 ILD is analysed and adhesion removal model corresponding to that is established. Through cycle polishing experiments, the change of nano-particle size and the state of particle surface before and after polishing is observed with TEM and Zeta potential analyzer, based on which the adhesion removal model is verified.

Info:

Periodical:

Key Engineering Materials (Volumes 389-390)

Edited by:

Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara

Pages:

475-480

DOI:

10.4028/www.scientific.net/KEM.389-390.475

Citation:

D. M. Guo et al., "Study on Adhesion Removal Model in CMP SiO2 ILD", Key Engineering Materials, Vols. 389-390, pp. 475-480, 2009

Online since:

September 2008

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Price:

$35.00

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