A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition

Abstract:

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As the level of Si-wafer surface directly affects device line-width capability, process latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision surface and flatness. Polishing is one of the important processing having influence on the surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is mainly affected by the many process parameters. For decreasing the surface roughness, the control of polishing parameters is very important. In this paper, the optimum condition selection of ultra precision wafer polishing and the effect of polishing parameters on the surface roughness were evaluated by the statistical analysis of the process parameters.

Info:

Periodical:

Key Engineering Materials (Volumes 389-390)

Edited by:

Tsunemoto Kuriyagawa, Libo Zhou, Jiwang Yan and Nobuhito Yoshihara

Pages:

493-497

DOI:

10.4028/www.scientific.net/KEM.389-390.493

Citation:

S. C. Hwang et al., "A Study on Statistical Analysis of Si-Wafer Polishing Process for the Optimum Polishing Condition", Key Engineering Materials, Vols. 389-390, pp. 493-497, 2009

Online since:

September 2008

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Price:

$35.00

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