Influence of an External Magnetic Field on Injected Charges of a Cr2O3/Fe/CeO2/Si MIS Capacitor


Article Preview

We investigated the influence of an external magnetic field for the carrier injection process of a metal (Au) / insulator (Cr2O3/Fe/CeO2) / semiconductor (Si) (MIS) capacitor, in which the insulator consists of magnetic materials. By applying an electric field, electrons propagating through the CeO2 layer from Si were injected into the Fe or an oxygen deficiency layer formed around the Fe layer. When a magnetic field was applied, the hysteresis window width of this capacitor was reduced. I-V curve analyses under a magnetic field revealed that this reduction was more likely due to the magnetic state of the Fe layer and the interaction between Fe and Cr2O3.



Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki




T. Yokota et al., "Influence of an External Magnetic Field on Injected Charges of a Cr2O3/Fe/CeO2/Si MIS Capacitor", Key Engineering Materials, Vols. 421-422, pp. 157-160, 2010

Online since:

December 2009




[1] T. Yokota, T. Kuribayashi, M. Gomi, T. Shundo, and Y. Sakakibara, Advanced Materials Research 11-12(2006), p.133.

[2] T. Lottermoser, T. Lonkai, U. Amann, D. Hohlwein, J. Ihringer, and M. Fiebig, Nature 430(2004), p.541.


[3] E. Kita, A. Tasaki, and K. Siratori, Jpn. J. Appl, Phys. 18(1979), p.1361.

[4] Ch. Binek, P. Borisov, X. Chen, A. Hochstrat, S. Sahoo, and W. Kleemann, Eur. Phys. J. B45 (2005) 197.

[5] P. Borisov, A. Hochstrat, X. Chen, W. Kleemann, Ch. Binek, Phys. Rev. Lett. 94 (2005), p.117203.

[6] Ch. Binek, A. Hochstrat, X. Chen, P. Borisov, W. Kleemann, and B. Doudin. J. Appl. Phys. 97 (2005) 10C514.


[7] T. Yokota, S. Murata, T. Kuribayashi, M. Gomi, J. Cerm. Soc. Jpn. in press.

[8] Y.Y. Zhu, Z. B. Fang, S. Chen, C. Liao, Y. Q. Wu, Y. L. Fan, and Z. M. Jiang. App. Phys. Lett. 91(2007) 122914.

[9] W. Shih, P. Juan, and J. Y. Lee. J. Appl. Phys. 103(2008) 094110.

[10] V. Beyer, J. von Borany, and M. Klimenkov. App. Phys. Lett. 89(2006)193505.

[11] T. Ishihara, and N. Sano. Jpn. J. Appl. Phys. 44 (2005)1682.