Microwave Characterization Techniques for High K Thin Films

Abstract:

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Characterization of the dielectric properties of bulk materials in the microwave frequency range is well developed while that of thin films is a challenge. New microwave characterization techniques are needed for thin films taking in to account the fact that they are always deposited on a dielectric or conducting substrate and the thickness of the film is too small compared to the wavelength involved. In this paper we are demonstrating various techniques that can be used for the microwave characterization of thin films. The microwave dielectric properties of the bismuth zinc niobate (BZN) thin films were characterized at different frequencies using a few techniques by involving coplanar waveguide (CPW) transmission lines circular patch capacitors and split post dielectric resonators. The first two are broadband measurement techniques while the third one is a spot frequency technique.

Info:

Periodical:

Key Engineering Materials (Volumes 421-422)

Edited by:

Tadashi Takenaka, Hajime Haneda, Kazumi Kato, Masasuke Takata and Kazuo Shinozaki

Pages:

73-76

DOI:

10.4028/www.scientific.net/KEM.421-422.73

Citation:

K. Sudheendran and K.C. J. Raju, "Microwave Characterization Techniques for High K Thin Films", Key Engineering Materials, Vols. 421-422, pp. 73-76, 2010

Online since:

December 2009

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Price:

$35.00

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