Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS


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The use of secondary-ion mass spectrometry (SIMS), nuclear magnetic resonance (NMR) and transmission electron microscopy (TEM) to detect the existence of amorphous silica in Ti3SiC2 oxidised at 500–1000°C is described. The formation of an amorphous SiO2 layer and its growth in thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for the first time the direct evidence of amorphous silica formation during the oxidation of Ti3SiC2 at 1000°C.



Key Engineering Materials (Volumes 434-435)

Edited by:

Wei Pan and Jianghong Gong




W. K. Pang et al., "Detection of Amorphous Silica in Air-Oxidized Ti3SiC2 at 500–1000°C by NMR and SIMS", Key Engineering Materials, Vols. 434-435, pp. 169-172, 2010

Online since:

March 2010




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