Coating of Polythiophene by Microwave Plasma Polymerization Process


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This research is focused on improving electrical conductivity of conjugated polythiophene films fabricated by microwave plasma assisted polymerization process. Polythiophene thin films with 300 nm to 1.5 micron thickness were deposited on glass substrates in a highly uniform fashion as evident by Scanning Electron Microscopic analysis. An efficient incorporation of the iodine dopant into the films was also successfully performed to give thin films with 120-250 nm thickness. The films were characterized by various spectroscopic methods. Attenuated total reflectance-Fourier transform infrared spectroscopy showed absorption frequencies of important functional groups mostly characteristics of thiophene. The doped fabricated films exhibited UV-vis spectra indicative of increased -conjugation (439-535 nm). Results from energy-dispersive X-ray spectroscopy confirmed the presence of iodine in the films of upto 10%. Electrical conductive measurements revealed that the undoped films has the conductivity in the range of 1.4×10-5 to 1.0×10-4 S/cm.



Edited by:

Jun Wang,Philip Mathew, Xiaoping Li, Chuanzhen Huang and Hongtao Zhu






B. Paosawatyanyong et al., "Coating of Polythiophene by Microwave Plasma Polymerization Process", Key Engineering Materials, Vol. 443, pp. 493-498, 2010

Online since:

June 2010




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