Abstract: We have measured spin and orbital magnetic form factors of Pd3Co for various reciprocal lattice points by the X-ray magnetic diffraction. Observed spin and orbital magnetic form factors are fitted by theoretical curves of the isolated atomic model under the dipole approximation. By the fitting analysis we have evaluated separately the spin and orbital component of the magnetic moment of Pd3Co alloy as 2.19 µB/f.u. and 0.83 µB/f.u., respectively. The total magnetic moment 3.02 µB/f.u. is comparable to the value of 2.93 µB/f.u. obtained by the magnetization measurement.
Abstract: An X-ray magnetic diffraction (XMD) is applied to ferromagnetic transition metal oxide YTiO3. The spin magnetic form factors are measured for 81 reciprocal lattice points of h0l, hk0 and 0kl series. Three-dimensional spin density distribution in the real space of YTiO3 is successfully obtained by using Maximum Entropy Method (MEM). This is the first result of spin density in the real space by the XMD.
Abstract: We have measured magnetic Compton profile of Co/Pd thin films sputtered on a substrate for studying the electronic structure. For the first time, a silicon nitride substrate of 100 nm thickness we used in the magnetic Compton scattering experiment. We have improved vacuum tubes of the Compton beam-line BL08W of SPring-8, and have reduced greatly the background scattering for the Compton profile. We have succeeded in measuring magnetic Compton profile of Co (0.8 nm)/Pd (1.6 nm) 400 nm multilayer.
Abstract: The ferromagnetic resonance frequency of single-layer magnetic films has been investigated in relation to lattice distortion. It is found that the ferromagnetic resonance frequency depends on a lattice distortion. This result raises the possibility of tuning the ferromagnetic resonance frequency by controlling the lattice distortion.
Abstract: Optical absorption in amorphous InGaZnO4 films was examined by optical transmittance and photothermal spectroscopy using individual cantilever. The amorphous InGaZnO4 films have optical bandgap of ~3.5 eV, and Urbach tail absorption and mid-gap absorption at 2.0-3.0 eV. Mid-gap absorption was reduced by thermal annealing at 300 °C in an atmosphere. This observation indicates that heat-induced structural change causes reduction of gap states in amorphous InGaZnO4 films.
Abstract: Crystallization behaviors of dc sputtered Ge2Sb2Te5 films were studied by X-ray diffraction and transient optical transmittance. Crystalline peak at 29.0° in diffraction patterns appeared after thermal annealing at 180 and 210 °C. Crystallization rate increased after thermal annealing below crystallization temperature. These observations indicate that heat-induced structural change enhances crystallization rate of Ge2Sb2Te5 films.
Abstract: Polycrystalline Li2GexSi1-xO3 (x = 0.0~1.0) was synthesized by solid state reaction, and its ionic conductivity was studied as a function of x in a temperature range of 500–700 K. The ionic conductivity was found to depend on x and was enhanced at x = 0.2–0.7. Furthermore, the pre-exponential factor and activation energy in the Arrhenius equation were also found to depend on x. These results suggest that lithium ionic conduction in Li2GexSi1-xO3 is strongly influenced by the structure of the framework.
Abstract: Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.