KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel

Abstract:

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Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.

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Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

33-38

DOI:

10.4028/www.scientific.net/KEM.470.33

Citation:

M. Anwar et al., "KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel", Key Engineering Materials, Vol. 470, pp. 33-38, 2011

Online since:

February 2011

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$35.00

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