KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel

Abstract:

Article Preview

Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an electric field. This capability is demonstrated for silicon-on-insulator field-effect-transistors (SOI-FETs) with a phosphorus-doped channel. We show results of the detection of individual dopants in Si by LT-KFM. Furthermore, we also observe single-electron charging in individual dopants located in the Si channel region.

Info:

Periodical:

Edited by:

Seiichi Miyazaki and Hitoshi Tabata

Pages:

33-38

DOI:

10.4028/www.scientific.net/KEM.470.33

Citation:

M. Anwar et al., "KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel", Key Engineering Materials, Vol. 470, pp. 33-38, 2011

Online since:

February 2011

Export:

Price:

$35.00

[1] B. E. Kane: Nature, Vol. 393 (1998), p.133.

[2] F. J. Ruess, W. Pok, T. C. G Reusch, M. J. Butcher, K. E. J. Goh, L. Oberbeck, G. Scappucci, A. R. Hamilton, and M. Y. Simmons: Small, Vol. 3 (2007), p.563.

DOI: 10.1504/ijnt.2008.016923

[3] D. Moraru, Y. Ono, H. Inokawa, and M. Tabe: Phys. Rev. B, Vol. 76 (2007), p.075332.

[4] D. Moraru, M. Ligowski, K. Yokoi, T. Mizuno, and M. Tabe: Appl. Phys. Express, Vol. 2 (2009), p.071201.

DOI: 10.1143/apex.2.071201

[5] H. Sellier, G. P. Lansbergen, J. Caro, S. Rogge, N. Collaert, I. Ferain, M. Jurczak, and S. Biesemans: Phys. Rev. Lett., Vol. 97 (2006), p.206805.

DOI: 10.1109/iconn.2006.340624

[6] Y. Ono, K. Nishiguchi, A. Fujiwara, H. Yamaguchi, H. Inokawa, and Y. Takahashi: Appl. Phys. Lett., Vol. 90 (2007), p.102106.

DOI: 10.1063/1.2679254

[7] M. Tabe, D. Moraru, M. Ligowski, M. Anwar, R. Jablonski, Y. Ono, and T. Mizuno: Phys. Rev. Lett., Vol. 105 (2010), p.016803.

DOI: 10.1103/physrevlett.105.016803

[8] M. Nishizawa, L. Bolotov, T. Kanayama: Appl. Phys. Lett., Vol. 90 (2009), p.122118.

[9] W. Goragot, M. Takai: Jpn. J. Appl. Phys., Vol. 43 (2004), p.3390.

[10] M. Ligowski, D. Moraru, M. Anwar, T. Mizuno, R. Jablonski, and M. Tabe: Appl. Phys. Lett., Vol. 93 (2008), p.142101.

[11] M. Ligowski, D. Moraru, M. Anwar, J. C. Tarido, T. Mizuno, M. Tabe, and R. Jablonski: J. Auto. Mob. Rob. & Intel. Syst., Vol. 3 (2009), p.130.

[12] M. Tabe, D. Moraru, M. Ligowski, M. Anwar, K. Yokoi, R. Jablonski, and T. Mizuno: Thin Solid Films, Vol. 518 (2010), p. S38.

DOI: 10.1016/j.tsf.2009.10.051

[13] M. Nonnenmacher, M. P. O'Boyle, H. K. Wickramasinghe: Appl. Phys. Lett., Vol. 58 (1991), p.2921.

[14] M. J. Calderon, B. Koiller, H. Xuedong, S. D. Sarma: Phys. Rev. Lett., Vol. 96 (2006), p.096802.

[15] L. M. Kettle, H. S. Goan, Sean C. Smith, C. J. Wellard, L. C. L. Hollenberg, and C. I. Pakes: Phy. Rev. B, Vol. 68 (2003), p.075317.

In order to see related information, you need to Login.