Technology Evolution for Silicon Nano-Electronics

Volume 470

doi: 10.4028/www.scientific.net/KEM.470

Paper Title Page

Authors: Shinichi Takagi, Sanjeewa Dissanayake, Mitsuru Takenaka

Abstract: In this paper, we report on critical issues and possible solutions for realizing Ge MOSFETs on the Si platform. The main critical objectives...

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Authors: Taizoh Sadoh, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Masanobu Miyao

Abstract: We have investigated the Si-seeding rapid-melting process and demonstrated the formation of giant Ge stripes with (100), (110), and (111)...

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Authors: Yoshinari Kamakura, Tomofumi Zushi, Takanobu Watanabe, Nobuya Mori, Kenji Taniguchi

Abstract: Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation...

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Authors: Nobuyoshi Koshida, Toshiyuki Ohta, Yoshiyuki Hirano, Romain Mentek, Bernard Gelloz

Abstract: The particular physical functions of quantum-sized silicon have been investigated, along with exploration of their potential device...

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Authors: Daniel Moraru, Kiyohito Yokoi, Ryusuke Nakamura, Sakito Miki, Takeshi Mizuno, Michiharu Tabe

Abstract: An individual dopant atom may become the active unit of future electronic devices by mediating single-electron transport in nanoscale...

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Authors: Miftahul Anwar, Daniel Moraru, Yuya Kawai, Maciej Ligowski, Takeshi Mizuno, Ryszard Jabłoński, Michiharu Tabe

Abstract: Low temperature Kelvin Probe Force Microscopy (LT-KFM) can be used to monitor the electronic potential of individual dopants under an...

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Authors: Yoko Sakurai, Shintaro Nomura, Kenji Shiraishi, Kenji Ohmori, Keisaku Yamada

Abstract: We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOI) samples. Thickness dependence...

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Authors: Yukihiro Takada, Masakazu Muraguchi, Tetsuo Endoh, Shintaro Nomura, Kenji Shiraishi

Abstract: Ohmic contacts are crucial for both device applications and the study of fundamental physics. From the perspective of device scaling trends,...

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Authors: Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Yasuteru Shigeta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Shintaro Nomura, Kenji Shiraishi, Tetsuo Endoh

Abstract: We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our...

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Showing 1 to 10 of 39 Paper Titles