Technology Evolution for Silicon Nano-Electronics

Volume 470

doi: 10.4028/www.scientific.net/KEM.470

Paper Title Page

Authors: Yuichi Setsuhara, Masaki Hashida

Abstract: An ultra-short pulse laser process is presented that is based on a photon-induced phonon excitation process for low-temperature nano-surface...

117
Authors: Motohiro Tomita, Daisuke Kosemura, Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Atsushi Ogura

Abstract: Global and local strained-Si samples, namely strained-Si on insulator (SSOI) wafer and a Si substrate with a patterned SiN film were each...

123
Authors: Chia Lung Lee, Tomohiko Sugita, Koji Tatsumi, Shigeru Ikeda, Michio Matsumura

Abstract: Using a new wet process based on a catalytic reaction, pores and grooves were formed in Si using Au, Pt, or Ag as the catalyst. The diameter...

129
Authors: Naoya Morisawa, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki

Abstract: We have studied the effect of 1310 nm light irradiation on the charge distribution of a hybrid floating gate consisting of silicon quantum...

135
Authors: Yan Li Pei, Tatsuro Hiraki, Toshiya Kojima, Takafumi Fukushima, Mitsumasa Koyanagi, Tetsu Tanaka

Abstract: In this work, high density and small size metal nanodots (MND) with different work-functions were fabricated as a floating gate of...

140
Authors: Osamu Nakatsuka, Shotaro Takeuchi, Yosuke Shimura, Akira Sakai, Shigeaki Zaima

Abstract: We have investigated the growth and crystalline structures of Ge1-xSnx buffer and tensile-strained Ge layers for future use in CMOS...

146
Authors: Heiji Watanabe, Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura

Abstract: We demonstrated the impact of plasma nitridation on thermally grown GeO2 for the purposes of obtaining high-quality germanium oxynitride...

152
Authors: Tetsuji Kato, Takaya Ueda, Yuji Ohara, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Shigeaki Zaima, Eiji Toyoda, Kouji Izunome, Yasuhiko Imai, Shigeru Kimura, Osamu Sakata

Abstract: The use of Si(011)/Si(001) direct silicon bonding (DSB) substrates is a key element of future complementary metal-oxide-semiconductor device...

158
Authors: Tetsuji Kato, Yuji Ohara, Takaya Ueda, Jun Kikkawa, Yoshiaki Nakamura, Akira Sakai, Osamu Nakatsuka, Masaki Ogawa, Shigeaki Zaima, Eiji Toyoda, Hiromichi Isogai, Takeshi Senda, Kouji Izunome, Hiroo Tajiri, Osamu Sakata, Shigeru Kimura

Abstract: Using X-ray microdiffraction (XRMD) and transmission electron microscopy (TEM) techniques, we have investigated the microscopic structure of...

164
Authors: Hideo Kohno, Takafumi Nogami

Abstract: We report a new route to fabricating carbon nanotubes and nanotube interconnects. Insulating Si nanochains covered with hydrocarbon, which...

171

Showing 21 to 30 of 39 Paper Titles