Structure Design and Experiment for a Resonant Accelerometer based on Electrostatic Stiffness


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The introduced resonant accelerometer makes use of the equivalent electrostatic stiffness to sense the acceleration. The sensitivity can be adjusted by changing the applied sensing voltage. But the no-linearity problem between the output frequency and applied acceleration is difficult to calculate the sensitivity and analysis its influence directly. When the stiffness of the fold beam is much smaller than the vibrating beam, the analytic sensitivity expression is given. The relationship between the sensitivity and the structure critical dimension is easily obtained in the design stage. A resonant accelerometer with sensitivity of 62Hz/g is designed and fabricated by bulk-silicon dissolved processes. The experiment finds there is the critical dimension loss in the fabrication process, which makes the sensitivity change; the same frequency disturbance will influence the closed-loop phase equilibrium. The equivalent interface model is built for the signal processes in the future. The frequency modulation and re-modulation is suggested to eliminate the disturbance. Vacuum package should be adopt to enlarge the weaken output signal.



Edited by:

Xiaohao Wang






H. Liu et al., "Structure Design and Experiment for a Resonant Accelerometer based on Electrostatic Stiffness", Key Engineering Materials, Vol. 483, pp. 122-127, 2011

Online since:

June 2011




[1] Susan X.P. Su, Henry S. Yang.A resonant accelerometer with two-stage micro-leverage mechanisms Fabrication by SOI-MEMS Technology. J. IEEE sensor Journal, Vol. 5, No. 6 (2005), pp.1214-1223.

[2] REN Jie, Fan Shuang-chun, WANG Lu-da. Critical technologies in design of micromechanical resonant accelerometer.J. Chinese Journal of Senor and Actuator, Vol. 21, No. 4 (2008), pp.593-595.

[3] S. Seok and K. Chun. Inertial-grade in-plane resonant silicon accelerometer.J. ELECTRONICS LETTERS 14th September Vol. 42, No. 19 (2006).

DOI: 10.1049/el:20061774

[4] ZHANG Feng-tian, HE Xiao-ping , SU Zhi-gui, et al. structure design and fabrication of silicon resonant micro-accelerometer based on electrostatic stiffness. Proceeding of the World Congress on Engineering, London, U. K, July 1-3, 2009, pp.469-473.

DOI: 10.1007/978-90-481-8776-8_4

[5] LIU Heng, ZHANG Feng-tian, HE Xiao-ping et al. The Influence of the Sensing Voltage for a Novel Type Resonant Micro-Accelerometer.J. CHINESE JOURNAL OF SENSORS AND ACTUATORS. Vol. 22, No. 9 (2009), pp.1261-1265.

[6] WANG Cheng wei, YAN Gui, zhen, ZHU Yong. Research of critical dimension loss control in the ICP etch of deep Silicon trenches. J. Micronanoelectronic Technology, No. 7-8 (2003), PP104-107.

[7] Joost C. Lotters, Wouter Olthuis, Peter H. Veltink. A Sensitive Differential Capacitance to Voltage Converter for Sensor Applications. J. Transaction on instrumentation and measurement, Vol. 48, No. 1 (1999), pp.89-96.

DOI: 10.1109/19.755066

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