Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study

Abstract:

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Silicon carbide can meet the additional requirements of operation in hostile environments where conventional silicon-based electronics (limited to 623K) cannot function. However, being recent in nature, significant study is required to understand the various machining properties of silicon carbide as a work material. In this paper, a molecular dynamic (MD) simulation has been adopted, to simulate single crystal β-silicon carbide (cubic) in an ultra precision machining process known as single point diamond turning (SPDT). β-silicon carbide (cubic), similar to other materials, can also be machined in ductile regime. It was found that a high magnitude of compression in the cutting zone causes a sp3- sp2 order-disorder transition which appears to be fundamental cause of wear of diamond tool during the SPDT process.

Info:

Periodical:

Edited by:

Michael N. Morgan, Andrew Shaw and Otar Mgaloblishvili

Pages:

150-155

DOI:

10.4028/www.scientific.net/KEM.496.150

Citation:

S. Goel et al., "Single Point Diamond Turning of Single Crystal Silicon Carbide: Molecular Dynamic Simulation Study", Key Engineering Materials, Vol. 496, pp. 150-155, 2012

Online since:

December 2011

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Price:

$38.00

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