Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories

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Performance of lateral phase change memories (LPCMs) is investigated by both electrical characterization and finite element analysis. Ge2Sb2Te5 lateral PCMs (GST-LPCMs) exhibit a low reset current but a bad endurance. By replacing GST with Sb2Te3 (ST) and adding a TiN layer between ST and electrodes, the ST-TiN-LPCMs are demonstrated to have a much improved endurance. Finite element analysis of the LPCMs with electric-thermal structural interaction shows that thermal confinement makes GST-LPCMs low-power consumptive but that high level stress makes them readily broken. In contrast, ST-TiN-LPCMs experience low level stress during operation but high power consumption is required.

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Edited by:

Osamu Hanaizumi, Masafumi Unno and Kenta Miura

Pages:

106-110

Citation:

Y. Yin and S. Hosaka, "Influence of Phase-Change Materials and Additional Layer on Performance of Lateral Phase-Change Memories", Key Engineering Materials, Vol. 497, pp. 106-110, 2012

Online since:

December 2011

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DOI: https://doi.org/10.1063/1.1415419

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