Low Temperature Wafer Level Adhesive Bonding Using BCB for Resonant Pressure Sensor

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This paper presents a method of low temperature wafer level adhesive bonding using non-photosensitive bisbenzocyclobutene (BCB) from Dow Co for resonant pressure sensor package. The bonding process is performed at the temperature below 250oC, with the pressure on the wafer 2-3 Bar in vacuum in a wafer bonding system. According to the bonding process, pre-bake time, pumping time, pressure placed on the sensor and the thickness of cross-linked layer are the most important factors. Experiments show that more than 95% of the area is successfully bonded, the hermeticity maintains well after thermal shock and long term tests, and the tensile strength of the fabricated bonds is up to 40MPa. The bonding technique was successfully tested in the fabrication process of resonant pressure sensor, and the results show that this bonding technique is a viable MEMS encapsulation technology for hermetically cavity sealing.

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Periodical:

Edited by:

Xiaohao Wang

Pages:

55-60

DOI:

10.4028/www.scientific.net/KEM.503.55

Citation:

Y. X. Li et al., "Low Temperature Wafer Level Adhesive Bonding Using BCB for Resonant Pressure Sensor", Key Engineering Materials, Vol. 503, pp. 55-60, 2012

Online since:

February 2012

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$35.00

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